• DocumentCode
    939590
  • Title

    Second breakdown in high-voltage switching transistors

  • Author

    Gaur, S.P.

  • Author_Institution
    IBM Corporation, Poughkeepsie, USA
  • Volume
    12
  • Issue
    20
  • fYear
    1976
  • Firstpage
    525
  • Lastpage
    527
  • Abstract
    A 2-dimensional mathematical model which includes the avalanche multiplication and internal self-heating effects has been used to predict the internal behaviour of a typical high-voltage power-transistor design. Collector n¿-n+ interface is the region of high electrical and thermal stresses which cause second-breakdown failure at high-current and high-voltage operating conditions.
  • Keywords
    bipolar transistors; power transistors; semiconductor device models; semiconductor switches; 2-dimensional mathematical model; avalanche multiplication; high voltage switching transistors; internal behaviour; internal self heating effects; power transistor; second breakdown;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19760400
  • Filename
    4240097
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=939590