Title :
Second breakdown in high-voltage switching transistors
Author_Institution :
IBM Corporation, Poughkeepsie, USA
Abstract :
A 2-dimensional mathematical model which includes the avalanche multiplication and internal self-heating effects has been used to predict the internal behaviour of a typical high-voltage power-transistor design. Collector n¿-n+ interface is the region of high electrical and thermal stresses which cause second-breakdown failure at high-current and high-voltage operating conditions.
Keywords :
bipolar transistors; power transistors; semiconductor device models; semiconductor switches; 2-dimensional mathematical model; avalanche multiplication; high voltage switching transistors; internal behaviour; internal self heating effects; power transistor; second breakdown;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19760400
