Large-Signal Equivalent-Circuit Model of a GaAs Dual-Gate MESFET Mixer (Short Papers)

A large-signal equivalent-circuit model of a GaAs MESFET mixer containing twelve elements, of which eight are voltage-dependent, is solved in the time domain for Iocal oscillator and frequencies of 9.5 GHz and 10.0 GHz, respectively. The results variation of conversion gain with local oscillator and signal power and are in good agreement with measured values. The model is formulated in such a way that material/device/circuit interactions can be yielding information on the preferred device structures and biasing conditions.