Title :
Interdiffusion of metallic contact layers on silicon IMPATT diodes
Author :
Morgan, D.V. ; Howes, M.J. ; Taylor, Daniel J. ; Brook, P.
Author_Institution :
University of Leeds, Department of Electrical & Electronic Engineering, Leeds, UK
Abstract :
A comparative study, using Rutherford backscattering of He ions, of Ag/Pt/Cr and Au/Pt/Cr metallisations on silicon substrates has shown that significant interdiffusion takes place for Ag/Pt/Cr at temperatures around 350°C, resulting in the removal of the platinum barrier layer. No such effect takes place at the same temperature for Au/Pt/Cr. These results are consistent with the observed life-test performance of devices with these metallisations.
Keywords :
IMPATT diodes; diffusion in solids; metallisation; particle backscattering; Ag/Pt/Cr; Au/Pt/Cr; He ions; Rutherford backscattering; Si IMPATT diodes; interdiffusion; metallic contact layers; metallisations;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19760417
