Title :
Highly Reliable High-Brightness GaN-Based Flip Chip LEDs
Author :
Chang, S.J. ; Chen, W.S. ; Shei, S.C. ; Ko, T.K. ; Shen, C.F. ; Hsu, Y.P. ; Chang, C.S. ; Tsai, J.M. ; Lai, W.C. ; Lin, A.J.
Author_Institution :
Nat. Cheng Kung Univ., Tainan
Abstract :
The properties of indium-tin-oxide (ITO)/Ni films as transparent ohmic contacts of nitride-based flip chip (FC) light emitting diodes (LEDs) were studied. It was found that 300degC rapid thermal annealed (RTA) ITO(15 nm)/Ni(1 nm) could provide good electrical and optical properties for FC LED applications. It was also found that 20-mA operation voltage and output power of the 465-nm FC LEDs with ITO/Ni/Ag reflective mirror were 3.16 V and 21 mW, respectively. Furthermore, it was found that output intensity of the proposed LED only decayed by 5% after 1200 h under 30-mA current injection at room temperature.
Keywords :
III-V semiconductors; flip-chip devices; gallium compounds; indium compounds; light emitting diodes; ohmic contacts; rapid thermal annealing; wide band gap semiconductors; GaN; ITO-Ni-Ag reflective mirror; current 20 mA; electrical properties; flip chip LED; high-brightness LED; highly reliable LED; indium tin oxide; light emitting diodes; optical properties; power 21 mW; rapid thermal annealing; temperature 293 K to 298 K; temperature 300 C; transparent ohmic contacts; voltage 3.16 V; wavelength 465 nm; Flip chip (FC); GaN; ITO/Ni/Ag; light emitting diode (LED);
Journal_Title :
Advanced Packaging, IEEE Transactions on
DOI :
10.1109/TADVP.2007.898510
