Title :
Ka-Band FET Oscillator (Short Paper)
Author :
Talwar, Ashok K.
fDate :
8/1/1985 12:00:00 AM
Abstract :
The design and performance of GaAs FET oscillators operating near 36 GHz are presented. The oscillators used readily available GaAs FET´s and were built in a microstrip circuit configuration. An output power of about +8 dBm was obtained with two devices in a single oscillator.
Keywords :
Bonding; Capacitors; Circuits; Costs; FETs; Frequency; Inductance; Microstrip; Oscillators; Wires;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.1985.1133066
