Title :
Scanned probe microscopy of YBa/sub 2/Cu/sub 3/O/sub x/ thin-film device structures on Si substrates
Author :
Moreland, J. ; Harvey, T.E. ; Ono, R.H. ; Roshko, A.
Author_Institution :
Nat. Inst. of Stand. & Technol., Boulder, CO, USA
fDate :
3/1/1993 12:00:00 AM
Abstract :
Scanning tunneling microscopy (STM) and atomic force microscopy (AFM) have been used to image YBa/sub 2/Cu/sub 3/O/sub x/ (YBCO) films grown on yttria stabilized zirconia (YSZ) buffer layers on Si substrates. The effects of deposition and patterning conditions on device topography and performance are being investigated. Evidence is found for pinhole formation in YSZ buffer layers and microcracking in the YBCO films. AFM images of 0.25- mu m-wide YBCO lines on Si made using electron-beam lithography and ion milling are presented.<>
Keywords :
atomic force microscopy; barium compounds; high-temperature superconductors; integrated circuit technology; scanning tunnelling microscopy; superconducting junction devices; superconducting thin films; yttrium compounds; 0.25 micron; AFM; HTSC; STM; Si substrates; YBa/sub 2/Cu/sub 3/O/sub x/; YBa/sub 2/Cu/sub 3/O/sub x/ thin-film device structures; ZrO/sub 2/Y/sub 2/O/sub 3/; atomic force microscopy; buffer layers; deposition conditions; device topography; electron-beam lithography; ion milling; microcracking; patterning conditions; pinhole formation; scanned probe microscopy; scanning tunnelling microscopy; semiconductor interconnects; yttria stabilized zirconia; Atomic force microscopy; Atomic layer deposition; Buffer layers; Lithography; Milling; Probes; Semiconductor films; Surfaces; Tunneling; Yttrium barium copper oxide;
Journal_Title :
Applied Superconductivity, IEEE Transactions on
