Title :
An Improved Model for GaAs MESFETs Suitable for a Wide Bias Range
Author :
Harnal, Hitesh ; Basu, Ananjan ; Koul, Shiban K. ; Khatri, R.K. ; Vyas, H.P. ; Kumar, Ashok
Author_Institution :
Dept. of Electr. Eng., Indian Inst. of Technol., New Delhi
Abstract :
In this letter, we present a new large signal model for GaAs metal-semiconductor field effect transistors, incorporating features for enhancing the bias range for which accuracy is maintained, for use in the simulation of microwave circuits. The model parameters for a specific case were extracted from a wide range of dc I-V and S-parameter data, and the simulated behavior was observed to match the measured data closely. The model includes the possibility of showing negative slopes of the I-V curves at high power without sacrificing accuracy in predicting radio frequency behavior, while remaining simple enough for use in simulation tools
Keywords :
III-V semiconductors; S-parameters; Schottky gate field effect transistors; gallium arsenide; microwave circuits; parameter estimation; semiconductor device models; GaAs; GaAs MESFET; GaAs metal-semiconductor field effect transistors; I-V curves; I-V data; S-parameter data; large signal model; microwave circuits; wide bias range; Accuracy; Circuit simulation; Data mining; FETs; Gallium arsenide; MESFETs; Microwave circuits; Predictive models; Radio frequency; Scattering parameters; Device model; equivalent circuit; metal-semiconductor field effect transistor (MESFET); parameter extraction;
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2006.887260
