A Low Supply Voltage VCO Implemented by a Single Common-Source 90 nm CMOS Transistor

Author

Hou, Jian-An ; Chang, Chieh-Pin ; Su, Jionguang ; Liou, Tsyr-Shyang ; Wong, Shyh-Chyi ; Wang, Yeong-Her

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan

Volume

17

Issue

1

fYear

2007

Firstpage

64

Lastpage

66

Abstract

A novel voltage controlled oscillation (VCO) topology using 90-m CMOS technology is demonstrated. The common-source PMOS single transistor integrated with an inductor leads to negative resistance for the VCO that minimizes the transistor size and decreases the flicker noise sources. To our knowledge, the topology of the core VCO is the most compact configuration ever reported. The fabricated VCO consumes 6.26mW with a supply voltage of 1 V and has a 1.68times1.41 mm² chip area, including the ESD protection circuit. At 1.77 GHz, PMOS VCO features an output power in the range of -5.2 dBm, and exhibits a phase noise of -94 dBc/Hz at the offset frequency of 300 kHz and -107 dBc/Hz at 1MHz

Keywords

CMOS integrated circuits; UHF oscillators; electrostatic discharge; negative resistance; phase noise; voltage-controlled oscillators; 1 V; 1.77 GHz; 6.26 mW; 90 nm; CMOS technology; ESD protection circuit; PMOS VCO; VCO topology; common-source PMOS single transistor; flicker noise sources; negative resistance; single common-source CMOS transistor; voltage controlled oscillation topology; voltage controlled oscillators; 1f noise; CMOS technology; Circuit topology; Electrostatic discharge; Inductors; Low voltage; Power generation; Protection; Voltage control; Voltage-controlled oscillators; Electrostatic discharge (ESD); PMOS; negative resistance; voltage controlled oscillation (VCO);

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2006.887266

Filename

4052371