Title :
Flip-Chip Assembled GaAs pHEMT Ka-Band Oscillator
Author :
Huang, Wei-Kuo ; Liu, Yu-An ; Wang, Che-Ming ; Hsin, Yue-Ming ; Liu, Cheng-Yi ; Tsung-Jung Yeh
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Jhongli
Abstract :
In this letter, we present a Ka-band oscillator with flip-chip assembled 0.15-mum-gate pHEMT. With a characterized 0.15-mum-gate GaAs pHEMT and consideration of the Au-Sn pillar bump transition, the GaAs pHEMT was flip-chip assembled on Al2O3 substrate where the passive components and coplanar waveguide connection were designed and fabricated. The measured output signal was at 27.55 GHz with an output power of 1.87 dBm and a phase noise of -109 dBc/Hz at 1-MHz offset, respectively. To our knowledge, this is the first flip-chip assembled pHEMT oscillator in the Ka-band
Keywords :
III-V semiconductors; alumina; assembling; coplanar waveguide components; flip-chip devices; gallium arsenide; gold; high electron mobility transistors; integrated circuit packaging; microwave field effect transistors; microwave oscillators; phase noise; tin; 0.15 micron; 27.55 GHz; Au-Sn; Au-Sn pillar bump transition; GaAs; GaAs pHEMT; Ka-band oscillator; coplanar waveguide connection; flip-chip assembly; passive components; phase noise; Assembly; Coplanar waveguides; Gallium arsenide; Noise measurement; Oscillators; PHEMTs; Phase measurement; Power measurement; Waveguide components; Waveguide transitions; Flip-chip; microwave integrated circuit (MIC); oscillator; pHEMT;
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2006.887272
