High breakdown voltage AlGaN-GaN HEMTs achieved by multiple field plates

Author

Xing, Huili ; Dora, Y. ; Chini, A. ; Heikman, S. ; Keller, S. ; Mishra, U.K.

Author_Institution

Electr. & Comput. Eng. Dept., Univ. of California, Santa Barbara, CA, USA

Volume

25

Issue

4

fYear

2004

fDate

4/1/2004 12:00:00 AM

Firstpage

161

Lastpage

163

Abstract

High-voltage Al_0.22Ga_0.78N-GaN high-electron mobility transistors have been fabricated using multiple field plates over dielectric passivation layers. The device breakdown voltage was found to increase with the addition of the field plates. With two field plates, the device showed a breakdown voltage as high as 900 V. This technique is easy to apply, based on the standard planar transistor fabrication, and especially attractive for the power switching applications.

Keywords

III-V semiconductors; aluminium compounds; field effect transistor switches; gallium compounds; high electron mobility transistors; power HEMT; semiconductor device breakdown; Al_0.22Ga_0.78N-GaN; AlGaN-GaN; HEMT; device breakdown voltage; dielectric passivation layers; high-electron mobility transistors; multiple field plates; planar transistor fabrication; power switch; Dielectrics and electrical insulation; Electrodes; FETs; Fabrication; Gate leakage; HEMTs; MODFETs; Passivation; Power electronics; Radio frequency;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2004.824845

Filename

1278542