• DocumentCode
    940080
  • Title

    V-groove power junction field-effect transistor for v.h.f. applications

  • Author

    Mok, T.D. ; Salama, C.A.T.

  • Author_Institution
    University of Toronto, Department of Electrical Engineering, Toronto, Canada
  • Volume
    12
  • Issue
    22
  • fYear
    1976
  • Firstpage
    582
  • Lastpage
    583
  • Abstract
    A new high-power, high-frequency junction field-effect transistor with a nonplanar V-shaped channel fabricated by preferential etching of ¿100¿ silicon is described. The structure of this transistor is very simple, requires only three photolithographic masking steps and results in a very high packing density. A device having an effective channel length of 2 ¿m was fabricated. This transistor exhibits a low-frequency transconductance of 9.6 mS/mm, a cutoff frequency of 0.9 GHz and an output power density of 25 W/mm2 of chip area.
  • Keywords
    junction gate field effect transistors; power transistors; JFET; V-groove; VHF applications; nonplanar V-shaped channel; power transistors;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19760443
  • Filename
    4240171
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=940080