Title :
High bandwidth and low-leakage current InP-In0.53Ga0.47As-InP DBHTs on GaAs substrates
Author :
Kim, Y.M. ; Griffith, Z. ; Rodwell, M.J.W. ; Gossard, A.C.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
fDate :
4/1/2004 12:00:00 AM
Abstract :
InP-In0.53Ga0.47As-InP double heterojunction bipolar transistors (DHBTs) were grown on GaAs substrates. A 284-GHz power-gain cutoff frequency fmax and a 216-GHz current-gain cutoff frequency fτ were obtained, presently the highest reported values for metamorphic HBTs. The breakdown voltage BVCEO was >5 V while the dc current gain β was 21. High thermal conductivity InP metamorphic buffer layers were employed in order to minimize the device thermal resistance.
Keywords :
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; leakage currents; millimetre wave bipolar transistors; 216 GHz; 284 GHz; DBHTs on GaAs substrates; GaAs; InP-In0.53Ga0.47As-InP; breakdown voltage; current-gain cutoff frequency; dc current gain; device thermal resistance; double heterojunction bipolar transistors; high bandwidth; low-leakage current; metamorphic HBTs; metamorphic buffer layers; power-gain cutoff frequency; thermal conductivity; Bandwidth; Buffer layers; Double heterojunction bipolar transistors; Gallium arsenide; Heterojunction bipolar transistors; Indium phosphide; Molecular beam epitaxial growth; Substrates; Thermal conductivity; Thermal resistance;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2004.825198
