Square-extensional mode single-crystal silicon micromechanical resonator for low-phase-noise oscillator applications

Author

Kaajakari, Ville ; Mattila, Tomi ; Oja, Aarne ; Kiihamäki, Jyrki ; Seppä, Heikki

Author_Institution

VTT Inf. Technol., Espoo, Finland

Volume

25

Issue

4

fYear

2004

fDate

4/1/2004 12:00:00 AM

Firstpage

173

Lastpage

175

Abstract

A micromechanical 13.1-MHz bulk acoustic mode silicon resonator having a high quality factor (Q=130 000) and high maximum drive level (P= 0.12 mW at the hysteresis limit) is demonstrated. The prototype resonator is fabricated of single-crystal silicon by reactive ion etching of a silicon-on-insulator wafer. A demonstration oscillator based on the new resonator shows single-sideband phase noise of -138 dBc/Hz at 1 kHz offset from the carrier.

Keywords

Q-factor; bulk acoustic wave devices; crystal oscillators; micromechanical resonators; phase noise; silicon-on-insulator; 13.1 MHz; RF-MEMS; drive level; hysteresis limit; low-phase-noise oscillator; micromechanical bulk acoustic mode silicon resonator; quality factor; reactive ion etching; silicon-on-insulator wafer; single-crystal silicon micromechanical resonator; single-sideband phase noise; square-extensional mode; Acoustic noise; Etching; Microcavities; Micromechanical devices; Oscillators; Phase noise; Q factor; Scanning electron microscopy; Shape; Silicon on insulator technology;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2004.824840

Filename

1278546