Title :
A single transverse-mode monolithically integrated long vertical-cavity surface-emitting laser
Author :
Wiemer, Michael W. ; Aldaz, Rafael I. ; Miller, David A B ; Harris, James S.
Author_Institution :
Solid State & Photonics Lab., Stanford Univ., CA, USA
fDate :
7/1/2005 12:00:00 AM
Abstract :
We present a fully monolithic long vertical-cavity surface-emitting laser operating in the fundamental TEM00 transverse mode with output powers up to 7.8 mW. The lasing wavelength is 980 nm and the threshold is 9.1 mA. Pump currents from threshold to rollover produce an output beam with an M2<1.08. The laser consists of an InGaAs-GaAs-AlGaAs gain region/semiconductor mirror bonded to a 0.5-mm-thick glass substrate with an integrated curved mirror.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; integrated optics; integrated optoelectronics; laser cavity resonators; laser mirrors; laser modes; monolithic integrated circuits; optical pumping; semiconductor lasers; surface emitting lasers; 0.5 mm; 7.8 mW; 9.1 mA; 980 nm; InGaAs-GaAs-AlGaAs; InGaAs-GaAs-AlGaAs gain region; SiO2; fundamental TEM00 mode; glass substrate; integrated curved mirror; monolithically integrated laser; semiconductor mirror; single transverse mode laser; vertical-cavity surface-emitting laser; Laser beams; Laser excitation; Laser modes; Mirrors; Power generation; Power lasers; Pump lasers; Semiconductor lasers; Surface emitting lasers; Vertical cavity surface emitting lasers; Bonding; laser modes; semiconductor laser arrays; semiconductor lasers; surface-emitting lasers;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2005.848277
