Title :
A 4.5 to 9.2-GHz Wideband Semidynamic Frequency Divide-by-1.5 in GaInP/GaAs HBT
Author :
Shin, Hyunchol ; Won, Bokyeon
Author_Institution :
Kwangwoon Univ., Seoul
Abstract :
A semidynamic frequency divide-by-1.5 circuit comprises an image-rejection mixer and a static divide-by-2 in its feedback path. Wideband suppression of unwanted tones is achieved by employing a tunable image-rejection mixer and a tunable single-stage polyphase filter. Implemented in GaInP/GaAs heterojunction bipolar transistor technology, the divide-by-1.5 operates over the input frequency range of 4.5 to 9.2GHz with better than -20-dBc suppressions of 1/3timesfin and fin components, while dissipating 29 mA from a 4.1-V supply
Keywords :
III-V semiconductors; MMIC; frequency dividers; gallium arsenide; heterojunction bipolar transistors; indium compounds; microwave mixers; 29 mA; 4.1 V; 4.5 to 9.2 GHz; GaInP-GaAs; dynamic frequency divider; heterojunction bipolar transistors; image-rejection mixer; monolithic microwave integrated circuits; polyphase filter; Energy consumption; Frequency conversion; Frequency synthesizers; Gallium arsenide; Heterojunction bipolar transistors; MMICs; Microwave filters; Radiofrequency integrated circuits; Tunable circuits and devices; Wideband; Dynamic frequency divider; GaInP/GaAs heterojunction bipolar transistors (HBTs); monolithic microwave integrated circuits (MMICs);
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2006.887280
