1.55-μm AlGaInAs-InP laterally coupled distributed feedback laser

Author

Jian Wang ; Jian-Bo Tian ; Peng-Fei Cai ; Bing Xiong ; Chang-Zheng Sun ; Yi Luo

Author_Institution

Dept. of Electron. Eng., Tsinghua Univ., Beijing, China

Volume

17

Issue

7

fYear

2005

fDate

7/1/2005 12:00:00 AM

Firstpage

1372

Lastpage

1374

Abstract

A novel 1.55-μm AlGaInAs-InP laterally coupled (LC) distributed feedback (DFB) semiconductor laser is presented. Longitudinal feedback and lateral optical confinement are realized simultaneously by incorporating deep gratings etched with inductively coupled plasma technique. Stable single-mode operation with a sidemode suppression ratio over 45 dB has been demonstrated for the fabricated LC-DFB laser.

Keywords

III-V semiconductors; aluminium compounds; diffraction gratings; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; laser feedback; laser modes; laser stability; quantum well lasers; sputter etching; 1.55 mum; AlGaInAs-InP laser; InGaInAs-InP; deep gratings; distributed feedback laser; etching; inductively coupled plasma; lateral optical confinement; laterally coupled laser; longitudinal feedback; semiconductor laser; sidemode suppression ratio; single-mode laser operation; stable laser operation; Distributed feedback devices; Etching; Gratings; Laser feedback; Optical coupling; Optical feedback; Plasma applications; Plasma confinement; Plasma stability; Semiconductor lasers; AlGaInAs; distributed feedback (DFB) laser; inductively coupled plasma (ICP); laterally coupled (LC);

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2005.848398

Filename

1453614