Title :
1.55-μm AlGaInAs-InP laterally coupled distributed feedback laser
Author :
Jian Wang ; Jian-Bo Tian ; Peng-Fei Cai ; Bing Xiong ; Chang-Zheng Sun ; Yi Luo
Author_Institution :
Dept. of Electron. Eng., Tsinghua Univ., Beijing, China
fDate :
7/1/2005 12:00:00 AM
Abstract :
A novel 1.55-μm AlGaInAs-InP laterally coupled (LC) distributed feedback (DFB) semiconductor laser is presented. Longitudinal feedback and lateral optical confinement are realized simultaneously by incorporating deep gratings etched with inductively coupled plasma technique. Stable single-mode operation with a sidemode suppression ratio over 45 dB has been demonstrated for the fabricated LC-DFB laser.
Keywords :
III-V semiconductors; aluminium compounds; diffraction gratings; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; laser feedback; laser modes; laser stability; quantum well lasers; sputter etching; 1.55 mum; AlGaInAs-InP laser; InGaInAs-InP; deep gratings; distributed feedback laser; etching; inductively coupled plasma; lateral optical confinement; laterally coupled laser; longitudinal feedback; semiconductor laser; sidemode suppression ratio; single-mode laser operation; stable laser operation; Distributed feedback devices; Etching; Gratings; Laser feedback; Optical coupling; Optical feedback; Plasma applications; Plasma confinement; Plasma stability; Semiconductor lasers; AlGaInAs; distributed feedback (DFB) laser; inductively coupled plasma (ICP); laterally coupled (LC);
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2005.848398
