Uncooled performance of 10-Gb/s laser modules with InGaAlAs-InP and InGaAsP-InP MQW electroabsorption Modulators integrated with semiconductor amplifiers

Author

Frateschi, N.C. ; Zhang, J. ; Jambunathan, R. ; Choi, W.J. ; Ebert, C. ; Bond, Aaron E.

Author_Institution

Inst. de Fisica "Gleb Wataghin", Univ. Estadual de Campinas, Sao Paulo, Brazil

Volume

17

Issue

7

fYear

2005

fDate

7/1/2005 12:00:00 AM

Firstpage

1378

Lastpage

1380

Abstract

Uncooled operation of long-reach high performance C-band 10 Gb/s of optical modulator modules is presented. Modules consisting of a distributed feedback laser and a chip with a monolithically integrated electroabsorption modulator and semiconductor optical amplifier based on multiquantum-well structures of both InGaAsP-InP and InGaAlAs-InP material systems are presented. Dispersion penalty of 1 dB over 94-km transmission, output power above 0 dBm, and low extinction ratio variation are demonstrated over an 80°C temperature range. A simple analysis of the quantum confined Stark effect is employed to explain the temperature-dc bias voltage dependence.

Keywords

III-V semiconductors; aluminium compounds; distributed feedback lasers; electro-optical modulation; electroabsorption; gallium arsenide; gallium compounds; indium compounds; integrated optics; integrated optoelectronics; monolithic integrated circuits; optical communication equipment; optical fibre communication; optical fibre dispersion; quantum confined Stark effect; quantum well lasers; semiconductor epitaxial layers; semiconductor optical amplifiers; thermo-optical effects; 10 Gbit/s; 80 degC; 94 km; C-band optical modulator; InGaAlAs-InP; InGaAlAs-InP modulators; InGaAsP-InP; InGaAsP-InP modulators; MQW modulators; dispersion penalty; distributed feedback laser; electroabsorption modulators; extinction ratio; integrated optics; laser modules; monolithically integrated modulator; multiquantum-well structures; quantum confined Stark effect; semiconductor optical amplifier; temperature-dc bias voltage dependence; uncooled laser performance; Distributed feedback devices; Laser feedback; Optical feedback; Optical materials; Optical modulation; Quantum well devices; Semiconductor lasers; Semiconductor materials; Semiconductor optical amplifiers; Stimulated emission; Electroabsorption; quantum confined Stark effect (QCSE); uncooled operation;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2005.849975

Filename

1453616