Title :
FROG measured high-power 185-fs pulses generated by down-chirping of the dispersion-managed breathing-mode semiconductor mode-locked laser
Author :
Resan, Bojan ; Archundia, Luis ; Delfyett, Peter J.
Author_Institution :
Center for Res. & Educ. in Opt. & Lasers, Univ. of Central Florida, Orlando, FL, USA
fDate :
7/1/2005 12:00:00 AM
Abstract :
A dispersion-managed breathing-mode mode-locked semiconductor ring laser generates linear down-chirped pulses which are dispersion compensated to duration as short as 185 fs and characterized by second-harmonic generation frequency-resolved optical gating. Down-chirping when compared to up-chirping allows broader mode-locked spectra and shorter pulse generation owing to the temporal and spectral semiconductor gain dynamics. The measured average output power is 14 mW at 323-MHz pulse repetition rate, implying a peak power of ∼230 W, and a focused intensity of ∼4.6 GW/cm2. To our knowledge, this is the highest peak power and the shortest pulse generation from an electrically pumped all-semiconductor system, obtained only by linear chirp compensation.
Keywords :
chirp modulation; compensation; electron beam pumping; laser cavity resonators; laser mode locking; optical dispersion; optical harmonic generation; optical pulse generation; ring lasers; semiconductor lasers; 14 mW; 230 W; 323 MHz; 85 fs; all-semiconductor system; breathing-mode laser; broader mode-locked spectra; dispersion compensation; dispersion-managed laser; down-chirping; electrically pumped system; frequency-resolved optical gating; high-power laser; linear chirp compensation; mode-locked laser; optical pulse generation; ring laser; second-harmonic generation; semiconductor gain dynamics; semiconductor laser; Character generation; Dispersion; Distributed power generation; Frequency; Laser mode locking; Optical pulse generation; Power generation; Pulse measurements; Ring lasers; Semiconductor lasers; Mode-locked lasers; semiconductor lasers; semiconductor nonlinear optics including multiple quantum wells; semiconductor optical amplifiers (SOAs); ultrafast pulse generation;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2005.850010