DocumentCode

940252

Title

Erratum: Dislocation-limited minority-carrier lifetime in n-type GaP

Volume

12

Issue

22

fYear

1976

Firstpage

604

Keywords

III-V semiconductors; carrier lifetime; dislocations; gallium compounds; minority carriers; dislocation density; epitaxial GaP layers;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19760460

Filename

4240201