DocumentCode :
940258
Title :
650-nm InGaP Broad Area Lasers With 5000-h Reliable Operation at 600 mW
Author :
Sumpf, Bernd ; Zorn, Martin ; Staske, Ralf ; Fricke, Jörg ; Ginolas, Arnim ; Häusler, Karl ; Pittroff, Wolfgang ; Ressel, Peter ; Erbert, Götz ; Weyers, Markus ; Tränkle, Günther
Author_Institution :
Ferdinand-Braun-Inst. fur Hochsfrequenstech., Berlin
Volume :
19
Issue :
2
fYear :
2007
Firstpage :
118
Lastpage :
120
Abstract :
Reliable operation of 650-nm broad area laser diodes with InGaP quantum-wells embedded in AlGaInP waveguide layers and n-AlInP and p-AlGaAs cladding layers is reported. Mounted on chemical vapor deposition (CVD)-diamond heat spreader and standard C-mounts, the 100-mum stripe width lasers showed reliable operation over 5000 h at 15 degC and 600 mW
Keywords :
aluminium compounds; chemical vapour deposition; gallium compounds; indium compounds; laser reliability; optical fabrication; quantum well lasers; 100 mum; 15 degC; 5000 h; 600 mW; 650 nm; AlGaInP; AlGaInP waveguide layers; C-mounts; InGaP; InGaP quantum-wells; broad area lasers; chemical vapor deposition; diamond heat spreader; laser reliability; Chemical lasers; Chemical vapor deposition; Diode lasers; Optical device fabrication; Power generation; Pump lasers; Quantum well lasers; Semiconductor lasers; Solid lasers; Waveguide lasers; Continuous-wave (CW) lasers; laser reliability; red lasers; semiconductor lasers;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2006.890085
Filename :
4052393
Link To Document :
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