Title :
New V-groove double-diffused m.o.s. (v.d.m.o.s.)
Author :
Yu, S.-Y. ; Ou-Yang, P.
Author_Institution :
State University of New York, Department of Eletrical Sciences, Stony Brook, USA
Abstract :
A new V-groove double-diffused m.o.s. (v.d.m.o s.) is proposed which combines the V-groove technology and the double-diffused m.o.s. (d.m.o.s.) technology. The fabrication processes arc qualitatively described. The gate is located on the vertical V-shaped surface, and the effective channel length is controlled by the vertical-diffusion process of the double-diffusion step. The v.d.m.o.s. is expected to have a faster speed and higher production yield than the ordinary d.m.o.s.
Keywords :
field effect integrated circuits; insulated gate field effect transistors; integrated circuit technology; semiconductor technology; V-groove double diffused MOS transistors; VDMOS technology; effective channel length; fabrication processes; faster speed; higher production yield; vertical diffusion controlled channel length;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19760461
