Title :
Novel magnetic-field sensor using carrier-domain rotation: proposed device design
Author_Institution :
Analog Devices Inc., Parkstone, UK
Abstract :
A bipolar semiconductor device is described in which a mobile domain of current rotates around a circular path at a rate proportional to a magnetic field, when this is perpendicular to the planar structure, or follows the magnetic vector when this is in the same plane. Potentially high sensitivities are possible, since the response is inherently integrating; practical limitations to this are discussed.
Keywords :
bipolar transistors; magnetic field measurement; semiconductor devices; transducers; bipolar semiconductor device; carrier domain rotation around circular path; digital output; high sensitivities; mobile domain of current; planar structure; practical limitations; proposed device design; semiconductor magnetic field sensor; transducers rate proportional to magnetic field;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19760465
