DocumentCode :
940325
Title :
Photocurrent spectroscopy for quantum-well intermixed photonic integrated circuit design
Author :
Morrison, Gordon B. ; Skogen, Erik J. ; Wang, Chad S. ; Raring, James W. ; Chang, Yu-Chia ; Sysak, Matt ; Coldren, Larry A.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of California, Santa Barbara, CA, USA
Volume :
17
Issue :
7
fYear :
2005
fDate :
7/1/2005 12:00:00 AM
Firstpage :
1414
Lastpage :
1416
Abstract :
Photocurrent spectroscopy is used to characterize band edges in quantum-well intermixed InGaAsP material lattice matched to InP. The band edge absorption data is used as a design tool to predict the dc performance of electroabsorption modulators, and is shown to agree well with data obtained from actual devices. In addition, we demonstrate the presence of an exciton peak in InGaAsP quantum wells, and present its evolution as a function of quantum-well intermixing and reverse bias voltage.
Keywords :
III-V semiconductors; electro-optical modulation; electroabsorption; energy gap; excitons; gallium arsenide; indium compounds; integrated optics; integrated optoelectronics; optical design techniques; photoconductivity; photodiodes; semiconductor quantum wells; InGaAsP; InGaAsP quantum wells; band edge absorption; dc performance; electroabsorption modulators; exciton; lattice matching; photocurrent spectroscopy; photodiodes; photonic integrated circuit design; quantum-well intermixing; reverse bias voltage; Absorption; Excitons; Indium phosphide; Lattices; Photoconductivity; Photonic integrated circuits; Quantum well devices; Quantum wells; Spectroscopy; Voltage; Electroabsorption modulators (EAMs); excitons; laser tuning; photoconductivity; photodiodes; quantum-well intermixing (QWI); semiconductor lasers;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2005.848543
Filename :
1453628
Link To Document :
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