Title :
Analysis of field distributions in a GaAs m.e.s.f.e.t. at large drain voltages
Author :
Sone, Jun´ichi ; Takayama, Yoichiro
Author_Institution :
Nippon Electric Co. Ltd., Central Research Laboratories, Kawasaki, Japan
Abstract :
Electric-field distributions and carrier-density distributions in a GaAs m.e.s.f.e.t. at large drain voltages are investigated with a new analytical model, which takes account of the electron-drift-velocity saturation with negative differential mobility and the extension of a depletion layer towards the drain electrode.
Keywords :
Schottky gate field effect transistors; carrier density; semiconductor device models; solid-state microwave devices; GaAs MESFETs; carrier density distributions; depletion layer extension towards drain; electric field distributions; electron drift velocity saturation; field distribution analysis; large drain voltages; negative differential mobility; semiconductor device models;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19760475
