Title :
21.5-dBm power-handling 5-GHz transmit/receive CMOS switch realized by voltage division effect of stacked transistor configuration with depletion-layer-extended transistors (DETs)
Author :
Ohnakado, Takahiro ; Yamakawa, Satoshi ; Murakami, Takaaki ; Furukawa, Akihiko ; Taniguchi, Eiji ; Ueda, Hiro-omi ; Suematsu, Noriharu ; Oomori, Tatsuo
Author_Institution :
Adv. Technol. R&D Center, Mitsubishi Electr. Corp., Hyogo, Japan
fDate :
4/1/2004 12:00:00 AM
Abstract :
This paper reports a 21.5-dBm power-handling 5-GHz transmit/receive CMOS switch utilizing the depletion-layer-extended transistor (DET), which possesses high effective substrate resistance and enables the voltage division effect of the stacked transistor configuration to work in the CMOS switch. Furthermore, low insertion losses of 0.95 and 1.44 dB are accomplished at 5 GHz in the transmit and receive modes, respectively, with the benefit of the insertion-loss improvement effects in the DET. At the same time, high isolations of more than 22 dB were obtained at 5 GHz in the transmit and receive modes with the adoption of the shunt/series type circuit.
Keywords :
CMOS integrated circuits; field effect MMIC; switching circuits; transceivers; 0.95 dB; 1.44 dB; 5 GHz; DET; depletion-layer-extended transistors; effective substrate resistance; insertion loss; insertion-loss improvement; power-handling transmit-receive CMOS switch; series type circuit; shunt type circuit; stacked transistor configuration; voltage division effect; FETs; Gallium arsenide; Insertion loss; MOSFETs; Microwave devices; Propagation losses; Radio frequency; Switches; Switching circuits; Voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.2004.825231
