Title :
A Low-Noise GaAs Monolithic Broad-Band Amplifier Using a Drain Current Saving Technique (Short Paper)
Author :
Osafune, K. ; Kato, N. ; Sugeta, T. ; Yamao, Y.
fDate :
6/1/1985 12:00:00 AM
Abstract :
A low-noise and low-power GaAs monolithic broad-band amplifier is proposed and has been developed, which has a new cascade connection with a large gate-width input FET and the other circuits in such a way that the output stage current flows through the input FET. The fabricated amplifier operates on +5-V single supply voltage, and provides a 3.3-dB noise figure, less than 180-mW power dissipation, and a 10-MHz--2.0-GHz bandwidth with 16-dB gain.
Keywords :
Circuits; Dielectrics; Electromagnetic waveguides; Gallium arsenide; Low-noise amplifiers; Microwave theory and techniques; Notice of Violation; Power dissipation; Rectangular waveguides; Waveguide components;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.1985.1133116
