Title :
Novel GaAs metallised diode configurations to reduce skin-effect contributions at high frequencies
Author :
Calviello, J.A. ; Wallace, J.L.
Author_Institution :
Cutler-Hammer, Inc., Central Research Group, AIL Division, Deer Park, USA
Abstract :
A highly reliable metallised GaAs Ta-Schottky-barrier diode with native-oxide passivation has been developed. The zero bias cutoff frequency of these diodes is greater than 1000 GHz when measured accurately near 60 GHz, with a zero-bias junction capacitance near 0·1 pF. This zero-bias cutoff frequency is approximately twice the value for a comparable nonmetallised device. The letter describes the r.f. properties and the structure of the device.
Keywords :
Schottky-barrier diodes; skin effect; solid-state microwave devices; GaAs metallised diode; RF properties; Schottky barrier diodes; junction capacitance; skin effect; zero bias cutoff frequency;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19760498
