Title :
Geiger mode operation of ultraviolet 4H-SiC avalanche photodiodes
Author :
Beck, Ariane L. ; Karve, G. ; Wang, S. ; Ming, J. ; Guo, X. ; Campbell, J.C.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Texas, Austin, TX, USA
fDate :
7/1/2005 12:00:00 AM
Abstract :
We report single photon counting in p-n junction 4H-SiC avalanche photodetectors. At 325 nm, the unity-gain external quantum efficiency was 10% and the single photon detection efficiency was 2.9%. This result represents ∼30% of the maximum attainable detection efficiency.
Keywords :
avalanche photodiodes; p-i-n photodiodes; photodetectors; photon counting; silicon compounds; wide band gap semiconductors; 10 percent; 2.9 percent; 325 nm; Geiger mode operation; SiC; p-n junction photodetectors; single photon counting; ultraviolet 4H-SiC avalanche photodiodes; unity-gain external quantum efficiency; Annealing; Avalanche photodiodes; Biological materials; Contacts; Dark current; Photodetectors; Probes; Semiconductor device noise; Silicon carbide; Voltage; Avalanche photodiode; Geiger mode; photodetector; silicon carbide;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2005.848399
