Comparison of GaInNAs laser diodes based on two to five quantum wells

Author

Gollub, Dirk ; Moses, Susanne ; Forchel, Alfred

Author_Institution

Nanosystems & Technol., Nanoplus GmbH, Gerbrunn, Germany

Volume

40

Issue

4

fYear

2004

fDate

4/1/2004 12:00:00 AM

Firstpage

337

Lastpage

342

Abstract

We have investigated GaInNAs-GaAsN multiquantum-well (MQW) lasers with two-QW (DQW), three-QW (TQW), and five-QW (5QW) active regions and emission in the 1.3-μm range. A solid-source molecular beam epitaxy system has been used to grow the structures. Operation of a GaInNAs 5QW laser is reported. Low threshold currents of 22 (DQW) to 52 mA (5QWs) and external efficiencies of 0.25 W/A (DQWs) to 0.16 W/A (5QWs) per facet are realized under CW operation. T₀-values of 121 K are obtained.

Keywords

III-V semiconductors; gallium compounds; indium compounds; laser variables measurement; molecular beam epitaxial growth; quantum well lasers; semiconductor epitaxial layers; semiconductor growth; semiconductor quantum wells; 1.3 mum; 121 K; 22 to 52 mA; CW operation; GaInNAs laser diodes; GaInNAs-GaAsN; GaInNAs-GaAsN multiquantum well lasers; active regions; emission; epitaxial growth; quantum wells; solid-source molecular beam epitaxy system; threshold currents; Diode lasers; Distributed feedback devices; Laser feedback; Optical fiber communication; Optical materials; Quantum well devices; Quantum well lasers; Surface emitting lasers; Threshold current; Vertical cavity surface emitting lasers;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/JQE.2004.825112

Filename

1278598