DocumentCode
940726
Title
Optical Effects on the Static and Dynamic Characteristics of a GaAs MESFET (Short Paper)
Author
Gautier, J.L. ; Pasquet, D. ; Pouvil, P.
Volume
33
Issue
9
fYear
1985
fDate
9/1/1985 12:00:00 AM
Firstpage
819
Lastpage
822
Abstract
In this paper, we describe the effect of light on the S-parameters of a GaAs MESFET. The photon energy is greater than the gap bandwidth of the semiconductor. The photoconductive and photovoltaic dc phenomena in the channel and in the depletion layer are theoretically analyzed with a unidimensional model to describe the light effect on the dc transconductance gm. The comparison between the dc transconductance, without and under illumination, and the theoretical model shows a very close agreement.
Keywords
FETs; Gallium arsenide; Lighting; MESFETs; Optical fibers; Photovoltaic systems; Power generation; Scattering parameters; Solar power generation; Transconductance;
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/TMTT.1985.1133137
Filename
1133137
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