Nonlinearity in power-current Characteristics of narrow-pulse-driven AlGaInP laser diodes

Author

Ben, Yu ; Sun, Changzheng ; Xue, Song ; Luo, Yi ; Yagi, Tetsuya ; Omura, Etsuji

Author_Institution

Dept. of Electron. Eng., Tsinghua Univ., Beijing, China

Volume

40

Issue

4

fYear

2004

fDate

4/1/2004 12:00:00 AM

Firstpage

349

Lastpage

353

Abstract

In this paper, a simple yet effective model is developed to analyze the nonlinearity in power-current characteristics, also known as "kinks", observed in AlGaInP selectively-buried-ridge (SBR) laser diodes driven by narrow pulses (∼10^-7s). The model takes the temperature-induced waveguide as well as the carrier distribution into account, and the simulation results show good agreement with the experiments. The main factors influencing the kink behavior of SBR lasers are investigated based on this model, and it is believed to be of great help for the optimization AlGaInP laser structure for high-power applications.

Keywords

III-V semiconductors; aluminium compounds; crystal defects; gallium compounds; high-speed optical techniques; ridge waveguides; semiconductor device models; semiconductor lasers; thermo-optical effects; waveguide lasers; AlGaInP; carrier distribution; kinks; narrow-pulse-driven laser diodes; nonlinearity; power-current characteristics; selectively-buried-ridge laser diodes; temperature-induced waveguide; Diode lasers; Equations; Laser modes; Optical pulses; Optical refraction; Optical variables control; Stimulated emission; Sun; Temperature distribution; Yagi-Uda antennas;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/JQE.2004.825118

Filename

1278600