• DocumentCode
    940784
  • Title

    Carrier removal after H1+, H2+ or H3+ implants into GaAs

  • Author

    Gecim, H.C. ; Sealy, B.J. ; Stephens, K.G.

  • Author_Institution
    University of Surrey, Department of Electronic & Electrical Engineering, Guildford, UK
  • Volume
    12
  • Issue
    25
  • fYear
    1976
  • Firstpage
    668
  • Lastpage
    669
  • Abstract
    It is demonstrated that the carrier removal caused by implanting equivalent doses of H1+ H2+ and H3+ ions into GaAs is identical and approximately independent of the ion energy in the range 300¿500 keV. Some recovery of carriers removed occurs at about 250°C.
  • Keywords
    III-V semiconductors; carrier density; gallium arsenide; ion implantation; GaAs; H1+; H2+; H3+; carrier removal; ion implantation;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19760512
  • Filename
    4240305
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=940784