A double-barrier-emitter triangular-barrier optoelectronic switch

Author

Guo, Der-Feng ; Chen, Jing-Yuh ; Chuang, Hung-Ming ; Chen, Chun-Yuan ; Liu, Wen-Chau

Author_Institution

Dept. of Electron. Eng., Chinese Air Force Acad., Kaohsiung, Taiwan

Volume

40

Issue

4

fYear

2004

fDate

4/1/2004 12:00:00 AM

Firstpage

413

Lastpage

419

Abstract

In this study, a triangular-barrier and a double-barrier structure are combined to form a double-barrier-emitter triangular-barrier optoelectronic switch (DTOS). In the structure center of the triangular barrier, a p-type delta-doped quantum well is inserted to enhance the hole confinement. Owing to the resonant tunneling through the double-barrier structure and avalanche multiplication in the reverse-biased junction, N-shaped and S-shaped negative-differential-resistance (NDR) phenomena occur in the current-voltage (I--V) characteristics under normal and reverse operation modes, respectively. The NDR characteristics show variations from dark to illumination conditions. Temperature effects on the NDRs of the DTOS are also obvious. The illumination and temperature influences on the device characteristics are investigated in this paper.

Keywords

avalanche breakdown; negative resistance; optical switches; photoconducting switches; resonant tunnelling; semiconductor quantum wells; DTOS; avalanche multiplication; double-barrier structure; double-barrier-emitter triangular-barrier optoelectronic switch; hole confinement; negative-differential-resistance; p-type delta-doped quantum well; resonant tunneling; reversed-biased junction; Carrier confinement; Gallium arsenide; Indium gallium arsenide; Lighting; Molecular beam epitaxial growth; Optical switches; Photonic integrated circuits; Resonant tunneling devices; Substrates; Temperature;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/JQE.2004.825113

Filename

1278610