DocumentCode
940889
Title
Humidity Effects on Sn Whisker Formation
Author
Oberndorff, Pascal ; Dittes, Marc ; Crema, Paolo ; Su, Peng ; Yu, Elton
Author_Institution
Philips Semicond., Nijmegen
Volume
29
Issue
4
fYear
2006
Firstpage
239
Lastpage
245
Abstract
Due to legislative issues, Pb-containing metallizations on semiconductor components are rapidly converted to Pb-free alternatives. One of the most popular alternatives is Sn electroplating. The major problem of these platings is the formation of Sn whiskers. In earlier publications, two mechanisms were uncovered that are responsible for whisker growth. However, these mechanisms do not explain whisker growth in high humidity. Therefore, Freescale, Infineon, Philips, and STMicrolectronics (E4) joined forces and started a design of experiment (DoE) in order to resolve this mechanism. It is shown that in high humidities, whiskers grow due to oxidation and corrosion of the Sn plating, irrespective of the base material. It is also shown that board assembly mitigates the whisker growth by this mechanism but does not completely prevent it
Keywords
corrosion; design of experiments; electroplating; legislation; metallisation; oxidation; tin; whiskers (crystal); board assembly; design of experiment; humidity effects; legislative issues; semiconductor components; tin electroplating; whisker formation; whisker growth; Corrosion; Grain boundaries; Humidity; Intermetallic; Semiconductor materials; Stress; Substrates; Temperature; Testing; Tin; Electroplating; humidity; matte Sn; whisker;
fLanguage
English
Journal_Title
Electronics Packaging Manufacturing, IEEE Transactions on
Publisher
ieee
ISSN
1521-334X
Type
jour
DOI
10.1109/TEPM.2006.887358
Filename
4052454
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