• DocumentCode
    940889
  • Title

    Humidity Effects on Sn Whisker Formation

  • Author

    Oberndorff, Pascal ; Dittes, Marc ; Crema, Paolo ; Su, Peng ; Yu, Elton

  • Author_Institution
    Philips Semicond., Nijmegen
  • Volume
    29
  • Issue
    4
  • fYear
    2006
  • Firstpage
    239
  • Lastpage
    245
  • Abstract
    Due to legislative issues, Pb-containing metallizations on semiconductor components are rapidly converted to Pb-free alternatives. One of the most popular alternatives is Sn electroplating. The major problem of these platings is the formation of Sn whiskers. In earlier publications, two mechanisms were uncovered that are responsible for whisker growth. However, these mechanisms do not explain whisker growth in high humidity. Therefore, Freescale, Infineon, Philips, and STMicrolectronics (E4) joined forces and started a design of experiment (DoE) in order to resolve this mechanism. It is shown that in high humidities, whiskers grow due to oxidation and corrosion of the Sn plating, irrespective of the base material. It is also shown that board assembly mitigates the whisker growth by this mechanism but does not completely prevent it
  • Keywords
    corrosion; design of experiments; electroplating; legislation; metallisation; oxidation; tin; whiskers (crystal); board assembly; design of experiment; humidity effects; legislative issues; semiconductor components; tin electroplating; whisker formation; whisker growth; Corrosion; Grain boundaries; Humidity; Intermetallic; Semiconductor materials; Stress; Substrates; Temperature; Testing; Tin; Electroplating; humidity; matte Sn; whisker;
  • fLanguage
    English
  • Journal_Title
    Electronics Packaging Manufacturing, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1521-334X
  • Type

    jour

  • DOI
    10.1109/TEPM.2006.887358
  • Filename
    4052454