DocumentCode :
940889
Title :
Humidity Effects on Sn Whisker Formation
Author :
Oberndorff, Pascal ; Dittes, Marc ; Crema, Paolo ; Su, Peng ; Yu, Elton
Author_Institution :
Philips Semicond., Nijmegen
Volume :
29
Issue :
4
fYear :
2006
Firstpage :
239
Lastpage :
245
Abstract :
Due to legislative issues, Pb-containing metallizations on semiconductor components are rapidly converted to Pb-free alternatives. One of the most popular alternatives is Sn electroplating. The major problem of these platings is the formation of Sn whiskers. In earlier publications, two mechanisms were uncovered that are responsible for whisker growth. However, these mechanisms do not explain whisker growth in high humidity. Therefore, Freescale, Infineon, Philips, and STMicrolectronics (E4) joined forces and started a design of experiment (DoE) in order to resolve this mechanism. It is shown that in high humidities, whiskers grow due to oxidation and corrosion of the Sn plating, irrespective of the base material. It is also shown that board assembly mitigates the whisker growth by this mechanism but does not completely prevent it
Keywords :
corrosion; design of experiments; electroplating; legislation; metallisation; oxidation; tin; whiskers (crystal); board assembly; design of experiment; humidity effects; legislative issues; semiconductor components; tin electroplating; whisker formation; whisker growth; Corrosion; Grain boundaries; Humidity; Intermetallic; Semiconductor materials; Stress; Substrates; Temperature; Testing; Tin; Electroplating; humidity; matte Sn; whisker;
fLanguage :
English
Journal_Title :
Electronics Packaging Manufacturing, IEEE Transactions on
Publisher :
ieee
ISSN :
1521-334X
Type :
jour
DOI :
10.1109/TEPM.2006.887358
Filename :
4052454
Link To Document :
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