High speed I2L gate with self-aligned double-diffusion injector

To improve the switching speed of I2L gate, the charge storage in the n¿p¿n transistor should be minimised. For the experimental verification of a high-speed I2L gate, a very small I2L gate with p+ external base and heavily doped emitter regions was fabricated. The minimum propagation delay realised in the gate was 3.2 n s/gate.