Title :
Noise performance of microwave GaAs f.e.t. amplifiers at low temperatures
Author :
Miller, Robert E. ; Phillips, T.G. ; Iglesias, D.E. ; Knerr, R.H.
Author_Institution :
Bell Laboratories, Murray Hill, USA
Abstract :
4 GHz measurements have been made of the noise temperature of Bell Laboratories microwave GaAs f.e.t. amplifiers cooled to liquid-nitrogen temperatures (78 K). An optimum noise temperature of about 30 K (0.4 dB noise figure) was obtained, compared with the room-temperature value of 152 K (1.8 dB).
Keywords :
Schottky gate field effect transistors; electron device noise; microwave amplifiers; solid-state microwave circuits; 4 GHz measurements; MESFET; microwave GaAs FET amplifiers; noise temperature;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19770008
