Title :
Temperature effects on trench-gate punch-through IGBTs
Author :
Santi, Enrico ; Kang, Xiaosong ; Caiafa, Antonio ; Hudgins, Jerry L. ; Palmer, Patrick R. ; Goodwine, Dale Q. ; Monti, Antonello
Author_Institution :
Dept. of Electr. Eng., Univ. of South Carolina, Columbia, SC, USA
Abstract :
The switching characteristics (turn-on and turn-off) and forward conduction drop of trench-gate punch-through insulated gate bipolar transistors (IGBTs) are examined over a temperature range of from -50°C to 125°C. An analytical description of the forward conduction voltage drop is presented based on temperature dependencies of the appropriate physical parameters and mechanisms. A physics-based PSpice model, incorporating much of the device behavior, is also described. Results from the model are compared to experimental waveforms.
Keywords :
insulated gate bipolar transistors; power bipolar transistors; power semiconductor switches; semiconductor device models; -50 to 125 degC; forward conduction drop; insulated gate bipolar transistors; physics-based PSpice model; power semiconductor; switching characteristics; trench gate punch-through IGBT; voltage drop; Analytical models; Associate members; Boundary conditions; Computational modeling; Equations; Industry Applications Society; Insulated gate bipolar transistors; Power electronics; Temperature dependence; Temperature distribution;
Journal_Title :
Industry Applications, IEEE Transactions on
DOI :
10.1109/TIA.2004.824513
