Title :
Local-oscillator-induced noise in GaAs Schottky mixer diodes
Author :
Mattauch, R.J. ; Fei, F.S.
Author_Institution :
University of Virginia, Charlottesville, USA
Abstract :
Increased noise temperature induced by local-oscillator power has been measured in Schottky-diode millimetre-wave mixers at 250 MHz and 4.75 GHz. Electric-field calculations indicate a portion of this noise is due to intervalley scattering in the undepleted epitaxial layer directly adjacent to the Schottky-diode anode. A noise-temperature equation is presented, which accounts for both shot and thermal noise, where the thermal portion includes the intervalley scaltering component.
Keywords :
Schottky-barrier diodes; electron device noise; mixers (circuits); random noise; solid-state microwave circuits; 250 MHz; 4.75 GHz; GaAs Schottky mixer diodes; intervalley scattering; local oscillator induced noise; millimetre wave mixers; noise temperature; shot noise; thermal noise; undepleted epitaxial layer;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19770017
