Title :
3-level conduction-band structure of GaAs from high-stress and high-field measurements
Author :
Adams, A.R. ; Vinson, P.J. ; Pickering, Cindy ; Pitt, G.D. ; Fawcett, W.
Author_Institution :
University of Surrey, Physics Department, Guildford, UK
Abstract :
Experimental and theoretical studies of both the hydrostatic pressure and uniaxial stress dependence of transferred-electron effects have shown that the L1c are below the X1c minima in GaAs. These are presented and compared with most recent optical measurements. The inferred electrical properties of GaAs and its alloys are discussed.
Keywords :
Gunn effect; III-V semiconductors; conduction bands; gallium arsenide; GaAs; hydrostatic pressure dependence; three level conduction band structure; transferred electron effects; uniaxial stress dependence;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19770033
