Title :
Power Increase of Pulsed Millimeter-Wave IMPATT Diodes (Short Paper)
Author :
Pierzina, R. ; Freyer, J.
fDate :
11/1/1985 12:00:00 AM
Abstract :
The fabrication and encapsulation of single-drift pulsed IMPATT diodes for 73 GHz is described. The transforming properties of the parasitic inductance and capacitance demonstrate the strong influence of diode-mounting technique. The used reduced-height waveguide resonator is described theoretically, giving an indication of optimum matching between resonator and transformed diode impedance. The diodes deliver more than 10-W output power at 73 GHz with 5-percent efficiency, if they are matched to the resonator by proper parasitic.
Keywords :
Fabrication; Frequency; Impedance; Millimeter wave communication; Millimeter wave radar; Millimeter wave technology; Packaging; Power generation; Semiconductor diodes; Strips;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.1985.1133200
