DocumentCode :
941427
Title :
Theoretical analysis and optimization of CDS signal processing method for CCD image sensors
Author :
Hynecek, Jaroslav
Author_Institution :
Texas Instruments Inc., Dallas, TX, USA
Volume :
39
Issue :
11
fYear :
1992
fDate :
11/1/1992 12:00:00 AM
Firstpage :
2497
Lastpage :
2507
Abstract :
The correlated double sampling (CDS) signal processing method used in processing of video signals from CCD image sensors is theoretically analyzed. The CDS signal processing is frequency used to remove noise, which is generated by the reset operation of the floating diffusion charge detection node, from the signal. The derived formulas for the noise power spectral density provide an invaluable insight into the choice of the circuit parameters affecting the noise spectrum. The obtained results are useful for determining the optimum cutoff frequency of the low-pass filter which precedes the sample-and-hold circuit and for finding the optimum size of the input transistor in the first amplifier stage. Once the optimum parameters are determined it is possible to find the minimum electron equivalent noise and the maximum signal-to-noise ratio achievable with this signal processing method. The validity of the derived theoretical results is confirmed by making comparisons with the experimental data
Keywords :
CCD image sensors; optimisation; sample and hold circuits; signal processing; CCD image sensors; correlated double sampling; experimental data; first amplifier stage; floating diffusion charge detection node; input transistor sizing; low-pass filter; maximum signal-to-noise ratio; minimum electron equivalent noise; noise power spectral density; noise removal; optimization; optimum cutoff frequency; sample-and-hold circuit; signal processing method; theoretical analysis; video signals; Charge-coupled image sensors; Circuit noise; Frequency; Image analysis; Image sampling; Signal analysis; Signal processing; Signal sampling; Signal to noise ratio; Video signal processing;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/16.163448
Filename :
163448
Link To Document :
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