Title :
Correlation of pulsed m.o.s. capacitor measurements with oxidation induced defects
Author :
Unter, T.F. ; Roberts, P.C.T. ; Lamb, D.R.
Author_Institution :
University of Southampton, Department of Electronics, Southampton, UK
Abstract :
Large variations have been observed between pulsed capacitor relaxation-time measurements made on samples which have received identical processing. This effect has been studied with 1 mm-diameter m.o.s. capacitors on (100)-orientation Czochralski silicon wafers. The measured relaxation times are related to process-induced defects, particularly oxidation-induced stacking faults.
Keywords :
capacitance; metal-insulator-semiconductor structures; stacking faults; Czochralski Si wafers; oxidation induced defects; pulsed MOS capacitor measurements; relaxation time; stacking faults;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19770065
