• DocumentCode
    941582
  • Title

    Correlation of pulsed m.o.s. capacitor measurements with oxidation induced defects

  • Author

    Unter, T.F. ; Roberts, P.C.T. ; Lamb, D.R.

  • Author_Institution
    University of Southampton, Department of Electronics, Southampton, UK
  • Volume
    13
  • Issue
    4
  • fYear
    1977
  • Firstpage
    93
  • Lastpage
    94
  • Abstract
    Large variations have been observed between pulsed capacitor relaxation-time measurements made on samples which have received identical processing. This effect has been studied with 1 mm-diameter m.o.s. capacitors on (100)-orientation Czochralski silicon wafers. The measured relaxation times are related to process-induced defects, particularly oxidation-induced stacking faults.
  • Keywords
    capacitance; metal-insulator-semiconductor structures; stacking faults; Czochralski Si wafers; oxidation induced defects; pulsed MOS capacitor measurements; relaxation time; stacking faults;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19770065
  • Filename
    4240397
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=941582