Title :
Frequency-dependent capacitance-voltage characteristics for amorphous silicon-based metal-insulator-semiconductor structures
Author :
Choi, Jong S. ; Neudeck, Gerold W.
Author_Institution :
Sch. of Electr. Eng., Purdue Univ., West Lafayette, IN, USA
fDate :
11/1/1992 12:00:00 AM
Abstract :
A frequency-dependent capacitance-voltage model for the a-Si:H-based MIS structure is presented along with an alternative direct measurement method. The static C-V model is derived based on the static I-V model developed using the simplified CFO band model for the a-Si bulk bandgap states and the simplified Davis-Mott model for the surface states. The frequency variation of the measured capacitance, using a somewhat modified TFT, is modeled with the lateral flow transmission line model. These models can be used to monitor TFT-fabrication parameters and to extract accurate capacitance model parameters of TFTs
Keywords :
amorphous semiconductors; capacitance; elemental semiconductors; hydrogen; metal-insulator-semiconductor structures; semiconductor device models; silicon; thin film transistors; Davis-Mott model; MIS structure; TFTs; amorphous Si:H structures; capacitance model parameters; capacitance-voltage characteristics; capacitance-voltage model; direct measurement; flow transmission line model; frequency dependence; semiconductors; static C-V model; static I-V model; surface states; Amorphous materials; Capacitance measurement; Capacitance-voltage characteristics; Capacitors; Electrodes; Electronic equipment testing; Fabrication; Frequency measurement; Metal-insulator structures; Thin film transistors;
Journal_Title :
Electron Devices, IEEE Transactions on
