Title :
A Nonlinear GaAs FET Model for Use in the Design of Output Circuits for Power Amplifiers
Author :
Curtice, Walter R. ; Ettenberg, M.
fDate :
12/1/1985 12:00:00 AM
Abstract :
A nonlinear equivalent circuit model for the GaAs FET has been developed based upon the small-signal device model and separate current measurements, including drain-gate avalanche current data. The harmonic-balance technique is used to develop the FET RF load-pull characteristics in an amplifier configuration under large-signal operation. Computed and experimental load-pull results show good agreement.
Keywords :
Circuits; Gallium arsenide; Microwave FETs; Microwave devices; Microwave technology; Microwave theory and techniques; Power amplifiers; Radio frequency; Time domain analysis; Transient analysis;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.1985.1133229
