• DocumentCode
    941966
  • Title

    Microwave modulation by amorphous-semiconductor switches

  • Author

    Bose, D.N. ; Jani, B.J.

  • Author_Institution
    Indian Institute of Science, Department of Electrical Communication Engineering, Bangalore, India
  • Volume
    13
  • Issue
    16
  • fYear
    1977
  • Firstpage
    451
  • Lastpage
    452
  • Abstract
    Microwave modulation has been achieved by using thin-film amorphous-semiconductor switches made of ternary chalcogenides. X-band microwaves were modulated by a threshold switch at frequencies varying from 100 Hz to 1 MHz, with modulation efficiencies comparable to siliconp¿i¿n diodes. The insertion loss was 0.5 to 0.6 dB and the isolation was 18 dB at 100 mA operating current. Possible applications this method are discussed.
  • Keywords
    amorphous semiconductors; modulators; semiconductor switches; solid-state microwave devices; X-band microwaves; amorphous semiconductor switches; applications; insertion loss; microwave modulation;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19770325
  • Filename
    4240442
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=941966