Deep-level changes associated with the degradation of GaAs0.6 P0.4 l.e.d.s

The generation of deep levels in GaAS0.6 P0.4 electroluminescent diodes during forward-bias degradation has been studied by transient capacitance techniques. By comparison with the native trapping centres, it is concluded that only hole trap concentration increases during aging. This result is correlated through current/voltage, light/current, reverse-recovery-time and infrared-radiation measurements.