DocumentCode :
942052
Title :
Fabrication and tunneling characteristics of low-leakage All-YBa/sub 2/Cu/sub 3/O/sub 7-x/ edge junctions
Author :
Ying, Q.-Y. ; Hilbert, C. ; Kroger, H.
Author_Institution :
Microelectronics & Comput. Technol. Corp., Austin, TX, USA
Volume :
3
Issue :
1
fYear :
1993
fDate :
3/1/1993 12:00:00 AM
Firstpage :
2277
Lastpage :
2280
Abstract :
All-YBa/sub 2/Cu/sub 3/O/sub 7/ (YBCO) superconductor-insulator superconductor tunnel edge junctions have been fabricated. Y/sub 2/O/sub 3/ is used as the barrier material. YBCO and Y/sub 2/O/sub 3/ are deposited by electron-beam evaporation under the same deposition conditions. Special attention is paid to creating a smooth base-electrode edge by ion-mill etching. The junction width is reduced to submicron size in order to avoid defects in the junction region. The YBCO superconductive gap structure observed in dynamic conductance, measurements is very pronounced. Quasi-particle tunneling is observed with very low leakage in the subgap region. No zero-bias anomalies are present. The edge junction fabrication and the junction tunneling characteristics are discussed.<>
Keywords :
Josephson effect; barium compounds; electron beam deposition; high-temperature superconductors; sputter etching; superconducting energy gap; superconducting junction devices; yttrium compounds; HTSC; Y/sub 2/O/sub 3/ barrier; YBa/sub 2/Cu/sub 3/O/sub 7/ junctions; dynamic conductance; electron-beam evaporation; fabrication; ion-mill etching; quasiparticle tunnelling; smooth base-electrode edge; superconductive gap structure; superconductor-insulator superconductor; tunnel edge junctions; tunneling characteristics; very low leakage; weak link Josephson junction; Conducting materials; Etching; Fabrication; High temperature superconductors; Josephson junctions; Superconducting devices; Superconducting materials; Superconductivity; Tunneling; Yttrium barium copper oxide;
fLanguage :
English
Journal_Title :
Applied Superconductivity, IEEE Transactions on
Publisher :
ieee
ISSN :
1051-8223
Type :
jour
DOI :
10.1109/77.233549
Filename :
233549
Link To Document :
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