Title :
Schottky mixer diodes made by a new method
Author :
Lacombe, J. ; Duchemin, J.P. ; Bonnet, Marc ; Huyghe, D.
Author_Institution :
Thomson CSF, DMH, Orsay, France
Abstract :
In the letter, preliminary results are reported on GaAs Schottky mixer diodes on material grown by means of a new method based on organometallic cracking at low pressures.
Keywords :
Schottky-barrier diodes; mixers (circuits); solid-state microwave devices; Schottky mixer diodes; organometallic cracking;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19770341