Title :
Model for charge propagation in a resistive-gate m.o.s. structure
Author_Institution :
R & D Institute for Electronic Components, Bucharest, Romania
Abstract :
A simple model is developed for the investigation of the charge-transport process in an m.o.s. transmission line. Closed-form solutions that compare well with numerical calculations are derived for the operational parameters of interest, by separating the propagation of charge into a transport step and a transfer step.
Keywords :
metal-insulator-semiconductor structures; semiconductor device models; transmission lines; MOS transmission line; charge propagation; resistive gate MOS structure; transfer step; transport step;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19770344
