• DocumentCode
    942188
  • Title

    A GaAs MESFET Oscillator Quasi-Linear Design Method

  • Author

    Abe, Hiroyuki

  • Volume
    34
  • Issue
    1
  • fYear
    1986
  • fDate
    1/1/1986 12:00:00 AM
  • Firstpage
    19
  • Lastpage
    25
  • Abstract
    A simplified quasi-linear method is proposed to design a GaAs MESFET oscillator. By expressing the generated power Pgen as a function of FET gate and drain RF voltages, it is possible to maximize Pgen under the limiting conditions on intrinsic FET terminal voltage amplitudes. The feedback circuit elements to realize a GaAs MESFET oscillator are derived. An X-band GaAs MESFET oscillator was designed by the quasi-linear method and was fabricated by using microwave integrated-circuit technology.
  • Keywords
    Design methodology; Feedback circuits; Gallium arsenide; MESFET circuits; Microwave FETs; Microwave oscillators; Microwave theory and techniques; Power generation; Radio frequency; Voltage;
  • fLanguage
    English
  • Journal_Title
    Microwave Theory and Techniques, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9480
  • Type

    jour

  • DOI
    10.1109/TMTT.1986.1133275
  • Filename
    1133275
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=942188